Dalies numeris VT6X1T2R Gamintojas ROHM Semiconductor Kategorijos Bipolar Transistors - BJT RoHS Duomenų lapas VT6X1T2R apibūdinimas Bipolar Transistors - BJT TR NPNX2 20V VCEO
Gamintojas ROHM Semiconductor Kategorijos Bipolar Transistors - BJT Collector- Base Voltage VCBO 20 V Collector- Emitter Voltage VCEO Max 20 V Collector-Emitter Saturation Voltage 0.12 V Configuration Dual Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 400 MHz Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Package / Case VMT-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 150 mW Series VT6X1 Transistor Polarity NPN