Dalies numeris NJD2873T4G Gamintojas onsemi Kategorijos Bipolar Transistors - BJT RoHS Duomenų lapas NJD2873T4G apibūdinimas Bipolar Transistors - BJT 2A 50V 12.5W NPN
Gamintojas onsemi Kategorijos Bipolar Transistors - BJT Collector- Base Voltage VCBO 50 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 0.3 V Configuration Single Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 65 MHz Maximum DC Collector Current 2 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 15 W Series NJD2873 Transistor Polarity NPN