Dalies numeris IKFW90N60EH3XKSA1 Gamintojas Infineon Technologies Kategorijos IGBT Transistors RoHS Duomenų lapas IKFW90N60EH3XKSA1 apibūdinimas IGBT Transistors INDUSTRY 14
Gamintojas Infineon Technologies Kategorijos IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.85 V Configuration Single Continuous Collector Current at 25 C 77 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 178 W Series Trenchstop High Speed 3 Technology SI