Dalies numeris SQ2318BES-T1_GE3 Gamintojas Vishay / Siliconix Kategorijos MOSFET RoHS Duomenų lapas SQ2318BES-T1_GE3 apibūdinimas MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET
Gamintojas Vishay / Siliconix Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 3 W Qg - Gate Charge 6.7 nC Rds On - Drain-Source Resistance 26.3 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V