Dalies numeris SQ2364EES-T1_GE3 Gamintojas Vishay Semiconductors Kategorijos MOSFET RoHS Duomenų lapas SQ2364EES-T1_GE3 apibūdinimas MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
Gamintojas Vishay Semiconductors Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 2 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 3 W Qg - Gate Charge 2.5 nC Rds On - Drain-Source Resistance 240 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 460 mV