Dalies numeris R6004JNXC7G Gamintojas ROHM Semiconductor Kategorijos MOSFET RoHS Duomenų lapas R6004JNXC7G apibūdinimas MOSFET 600V N-CH 4A POWER
Gamintojas ROHM Semiconductor Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 4 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 35 W Qg - Gate Charge 10.5 nC Rds On - Drain-Source Resistance 1.43 Ohms Technology SI Tradename PrestoMOS Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V