Dalies numeris R6012JNJGTL Gamintojas ROHM Semiconductor Kategorijos MOSFET RoHS Duomenų lapas R6012JNJGTL apibūdinimas MOSFET 600V N-CH 12A POWER
Gamintojas ROHM Semiconductor Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 12 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-3 Packaging Cut Tape, Reel Pd - Power Dissipation 160 W Qg - Gate Charge 28 nC Rds On - Drain-Source Resistance 390 mOhms Technology SI Tradename PrestoMOS Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V