Dalies numeris R6047ENZ4C13 Gamintojas ROHM Semiconductor Kategorijos MOSFET RoHS Duomenų lapas R6047ENZ4C13 apibūdinimas MOSFET 600V N-CH 47A POWER MOSFET
Gamintojas ROHM Semiconductor Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 47 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 481 W Qg - Gate Charge 145 nC Rds On - Drain-Source Resistance 72 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V