Dalies numeris SQ4182EY-T1_GE3 Gamintojas Vishay / Siliconix Kategorijos MOSFET RoHS Duomenų lapas SQ4182EY-T1_GE3 apibūdinimas MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
Gamintojas Vishay / Siliconix Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 32 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SO-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 7.1 W Qg - Gate Charge 110 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 3.1 mOhms Technology SI Tradename TrenchFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V