Dalies numeris HUF76629D3ST Gamintojas onsemi / Fairchild Kategorijos MOSFET RoHS Duomenų lapas HUF76629D3ST apibūdinimas MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch
Gamintojas onsemi / Fairchild Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 20 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 110 W Qg - Gate Charge 43 nC Rds On - Drain-Source Resistance 41.5 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage - 16 V, + 16 V Vgs th - Gate-Source Threshold Voltage 1 V