Dalies numeris SQ4431EY-T1_GE3 Gamintojas Vishay Semiconductors Kategorijos MOSFET RoHS Duomenų lapas SQ4431EY-T1_GE3 apibūdinimas MOSFET 30V 10.8A 6W AEC-Q101 Qualified
Gamintojas Vishay Semiconductors Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 10.8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SO-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 6 W Qg - Gate Charge 25 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 22 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V