Dalies numeris HUF75639S3ST Gamintojas onsemi / Fairchild Kategorijos MOSFET RoHS Duomenų lapas HUF75639S3ST apibūdinimas MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm
Gamintojas onsemi / Fairchild Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 56 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 200 W Qg - Gate Charge 130 nC Rds On - Drain-Source Resistance 25 mOhms Technology SI Tradename UltraFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V