Dalies numeris HUF75639S3 Gamintojas onsemi / Fairchild Kategorijos MOSFET RoHS Duomenų lapas HUF75639S3 apibūdinimas MOSFET TO-262
Gamintojas onsemi / Fairchild Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 56 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-262-3 Packaging Tube Pd - Power Dissipation 200 W Qg - Gate Charge 130 nC Rds On - Drain-Source Resistance 25 mOhms Technology SI Tradename UltraFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V