- Dalies numeris
- UJ3C065080B3
- Gamintojas
- UnitedSiC
- Kategorijos
- MOSFET
- RoHS
- Duomenų lapas
- apibūdinimas
- MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L
UJ3C065080B3
Vaizdai skirti tik nuorodoms
Specifikacijos
- Gamintojas
- UnitedSiC
- Kategorijos
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 25 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- D2PAK-3
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 115 W
- Qg - Gate Charge
- 51 nC
- Rds On - Drain-Source Resistance
- 100 mOhms
- Technology
- SiC
- Tradename
- SiC FET
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 25 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
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Naujausios apžvalgos
it is safe and sound all, thank you seller!
Arturo Madril
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Thank You all fine, packed very well
Ulrich Bundke
Everything is fine!
Jane Doe
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
Babatunde Alli
Tau taip pat gali patikti
Žmonės žiūri UJ3C065080B3 tada nusipirko
UJ3C065080B3 Naujienos
03/14/2023
03/13/2023
03/09/2023
Susiję raktiniai žodžiai UJ3C
- UJ3C065080B3 Integruota
- UJ3C065080B3 RoHS
- UJ3C065080B3 PDF duomenų lapas
- UJ3C065080B3 Duomenų lapas
- UJ3C065080B3 1 dalis. \ T
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- UJ3C065080B3 Platintojas
- UJ3C065080B3 PDF
- UJ3C065080B3 Komponentas
- UJ3C065080B3 IC
- UJ3C065080B3 Atsisiųsti PDF
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- UJ3C065080B3 Duomenų lapas
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- UJ3C065080B3 Techniniai duomenys
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