Dalies numeris UF3C065080T3S Gamintojas UnitedSiC Kategorijos MOSFET RoHS Duomenų lapas UF3C065080T3S apibūdinimas MOSFET 650V/80mOhm, SiC, FAST CASCODE, G3, TO-220-3L, REDUCED Rth
Gamintojas UnitedSiC Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 31 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 190 W Qg - Gate Charge 51 nC Rds On - Drain-Source Resistance 100 mOhms Technology SiC Tradename SiC FET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 4 V