Dalies numeris SQ3427AEEV-T1_BE3 Gamintojas Vishay / Siliconix Kategorijos MOSFET RoHS Duomenų lapas SQ3427AEEV-T1_BE3 apibūdinimas MOSFET P-CHANNEL 60V (D-S)
Gamintojas Vishay / Siliconix Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 5.3 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 5 W Qg - Gate Charge 15.3 nC Rds On - Drain-Source Resistance 95 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V