- Dalies numeris
- TP65H050G4BS
- Gamintojas
- Transphorm
- Kategorijos
- MOSFET
- RoHS
- Duomenų lapas
- apibūdinimas
- MOSFET GAN FET 650V 34A TO263
TP65H050G4BS
Vaizdai skirti tik nuorodoms
Specifikacijos
- Gamintojas
- Transphorm
- Kategorijos
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 34 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- TO-263-3
- Packaging
- Bulk
- Pd - Power Dissipation
- 119 W
- Qg - Gate Charge
- 16 nC
- Rds On - Drain-Source Resistance
- 60 mOhms
- Technology
- SI
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4.8 V
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Naujausios apžvalgos
Hello! Order received, very happy. Thank you very much!
Flavia
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
Works. Recommend
Rajiv
TP65H050G4BS Naujienos
03/14/2023
03/13/2023
03/09/2023
Susiję raktiniai žodžiai TP65
- TP65H050G4BS Integruota
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- TP65H050G4BS PDF duomenų lapas
- TP65H050G4BS Duomenų lapas
- TP65H050G4BS 1 dalis. \ T
- TP65H050G4BS Pirkti
- TP65H050G4BS Platintojas
- TP65H050G4BS PDF
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- TP65H050G4BS Atsisiųsti PDF
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- TP65H050G4BS Kaina
- TP65H050G4BS Duomenų lapas
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- TP65H050G4BS Techniniai duomenys
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