Dalies numeris R6035ENZ4C13 Gamintojas ROHM Semiconductor Kategorijos MOSFET RoHS Duomenų lapas R6035ENZ4C13 apibūdinimas MOSFET
Gamintojas ROHM Semiconductor Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 35 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 379 W Qg - Gate Charge 110 nC Rds On - Drain-Source Resistance 102 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 4 V