R6035ENZ4C13

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Dalies numeris
R6035ENZ4C13
Gamintojas
ROHM Semiconductor
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET

Specifikacijos

Gamintojas
ROHM Semiconductor
Kategorijos
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
35 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
379 W
Qg - Gate Charge
110 nC
Rds On - Drain-Source Resistance
102 mOhms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
4 V

Naujausios apžvalgos

goods very well received very good quality

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Thank You all fine, packed very well

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