Dalies numeris R6024KNZC17 Gamintojas ROHM Semiconductor Kategorijos MOSFET RoHS Duomenų lapas R6024KNZC17 apibūdinimas MOSFET
Gamintojas ROHM Semiconductor Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 24 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PF-3 Packaging Tube Pd - Power Dissipation 74 W Qg - Gate Charge 45 nC Rds On - Drain-Source Resistance 165 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 5 V