Dalies numeris R6006ANDTL Gamintojas ROHM Semiconductor Kategorijos MOSFET RoHS Duomenų lapas R6006ANDTL apibūdinimas MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST
Gamintojas ROHM Semiconductor Kategorijos MOSFET Channel Mode Enhancement Id - Continuous Drain Current 6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Reel Pd - Power Dissipation 40 W Qg - Gate Charge 15 nC Rds On - Drain-Source Resistance 900 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V